document number: 81314 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.3, 15-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 2.5 a output current igbt and mosfet driver vo3120 vishay semiconductors description the vo3120 consists of a led optically coupled to an integrated circuit with a power output stage. this optocoupler is ideally suited for driving power igbts and mosfets used in motor control inverter applications. the high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. the voltage and current supplied by this optocoupler makes it ideally suited for directly dri ving igbts with ratings up to 800 v/50 a. for igbts with higher ratings, the vo3120 can be used to drive a discrete power stage which drives the igbt gate. features ? 2.5 a minimum peak output current ? 25 kv/s minimum common mode rejection (cmr) at v cm = 1500 v ?i cc = 2.5 ma maximum supply current ? under voltage lock-out (uvlo) with hysteresis ? wide operating v cc range: 15 v to 32 v ? 0.2 s maximum pulse width distortion ? industrial temperature range: - 40 c to 110 c ? 0.5 v maximum low level output voltage (v ol ) ? reinforced insulation rated per din en 60747-5-2 ? compliant to rohs directive 2002/95/ec applications ? isolated igbt/mosfet gate driver ? ac and brushless dc motor drives ? induction stove top ? industrial inverters ? switch mode power supplies (smps) ? uninterruptible power supplies (ups) agency approvals ? ul - file no. e52744 system code h, double protection ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-2 (vde 0884) and reinforced insulation rating available with option 1 1 2 3 4 8 7 6 5 shield 20530_1 a c nc nc v o v o v cc v ee v de 19813 ordering information vo3120-x0##t part number package option tape and reel package ul, cul, vde dip-8, tubes vo3120 dip-8, tubes VO3120-X001 smd-8, option 7, tape and reel vo3120-x007t truth table led v cc - v ee positive going (turn on) v cc - v ee negative going (turn off) v o off 0 v to 32 v 0 v to 32 v low on 0 v to 11 v 0 v to 9.5 v low on 11 v to 13.5 v 9.5 v to 12 v transition on 13.5 v to 32 v 12 v to 32 v high > 0.7 mm 7.62 mm option 7 dip-8
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 81314 2 rev. 1.3, 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 vishay semiconductors 2.5 a output current igbt and mosfet driver notes ? stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for e xtended periods of the time ca n adversely affect reliability. (1) maximum pulse width = 10 s, maximum duty cycl e = 0.2 %. this value is intended to allow for component tolerances for designs w ith i o peak minimum = 2.5 a. see a pplications section for additional deta ils on limiting i oh peak. (2) refer to reflow profile for soldering conditions for surface mount ed devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input input forward current i f 25 ma peak transient input current < 1 s pulse width, 300 pps i f(tran) 1a reverse input voltage v r 5v output power dissipation p diss 45 mw output high peak output current (1) i oh(peak) 2.5 a low peak output current (1) i ol(peak) 2.5 a supply voltage (v cc - v ee ) 0 to + 35 v output voltage v o(peak) 0 to + v cc v output power dissipation p diss 250 mw optocoupler isolation test voltage (between emitter and detector) t = 1 s v iso 5300 v rms storage temperature range t s - 55 to + 125 c ambient operating temperature range t a - 40 to + 110 c total power dissipation p tot 295 mw lead solder temperature (2) for 10 s, 1.6 mm below seating plane 260 c recommended operating condition parameter symbol min. max. unit power supply voltage v cc - v ee 15 32 v input led current (on) i f 716ma input voltage (off) v f(off) - 3 0.8 v operating temperature t amb - 40 + 110 c
document number: 81314 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.3, 15-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 2.5 a output current igbt and mosfet driver vishay semiconductors note ? the thermal characteristics table above were measured at 25 c and the thermal model is represented in the thermal network bel ow. each resistance value given in this model can be used to calculate th e temperatures at each node for a given operating condition. th e thermal resistance from board to am bient will be dependent on the type of pcb, layo ut and thickness of copper traces. for a detailed ex planation of the thermal model, please reference vishay's thermal characteristics of optocouplers application note. notes ? minimum and maximum values were tested over recommended operating conditions (t a = - 40 c to 110 c, i f(on) = 7 ma to 16 ma, v f(off) = - 3 v to 0.8 v, v cc = 15 v to 32 v, v ee = ground) unless otherwise specified. typical values are characteristics of the device and are the result of engineering evaluations. typical values are for information only and are not part of the testing requirements. al l typical values were measured at t amb = 25 c and with v cc - v ee = 32 v. (1) maximum pulse width = 50 s, maximum duty cycle = 0.5 %. (2) maximum pulse width = 10 s, maximum duty cycle = 0.2 %. this va lue is intended to allow for component tolerances for designs w ith i o peak minimum = 2.5 a. (3) in this test v oh is measured with a dc load current. when driving capacitive loads v oh will approach v cc as i oh approaches zero a. maximum pulse width = 1 ms, maximum duty cycle = 20 %. thermal characteristics parameter symbol value unit led power di ssipation p diss 45 mw output power dissipation p diss 250 mw total power dissipation p tot 285 mw maximum led junction temperature t jmax. 125 c maximum output die j unction temperature t jmax. 125 c thermal resistance, j unction emitter to board ? jeb 169 c/w thermal resistance, junc tion emitter to case ? jec 192 c/w thermal resistance, j unction detector to board ? jdb 82 c/w thermal resistance, j unction detector to case ? jdc 80 c/w thermal resistance, j unction emitter to junction detector ? jed 200 c/w thermal resistance, case to ambient ? ca 2645 c/w electrical characteristics parameter test condition symbol min. typ. max. unit high level output current v o = (v cc - 4 v) i oh (1) 0.5 a v o = (v cc - 15 v) i oh (2) 2.5 a low level output current v o = (v ee + 2.5 v) i ol (1) 0.5 a v o = (v ee + 15 v) i ol (2) 2.5 a high level output voltage i o = - 100 ma v oh (3) v cc - 4 v low level output voltage i o = 100 ma v ol 0.2 0.5 v high level supply current output open, i f = 7 ma to 16 ma i cch 2.5 ma low level supply current output open, v f = - 3 v to + 0.8 v i ccl 2.5 ma threshold input current low to high i o = 0 ma, v o > 5 v i flh 5ma threshold input voltage high to low v fhl 0.8 v input forward voltage i f = 10 ma v f 11.6v temperature coefficient of forward voltage i f = 10 ma ? v f / ? t a - 1.4 mv/c input reverse breakdown voltage i r = 10 a bv r 5v input capacitance f = 1 mhz, v f = 0 v c in 60 pf uvlo threshold v o ? 5 v v uvlo + 11 13.5 v i f = 10 ma v uvlo - 9.5 12 v uvlo hysteresis uvlo hys 1.6 v t a ca t c t jd t je t b ec eb dc db ba de t a 19996 package
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 81314 4 rev. 1.3, 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 vishay semiconductors 2.5 a output current igbt and mosfet driver test circuits fig. 1 - i oh test circuit fig. 2 - i ol test circuit fig. 3 - v oh test circuit fig. 4 - v ol test circuit fig. 5 - i flh test circuit fig. 6 - uvlo test circuit 20973-2 1 2 3 4 8 7 6 5 i oh 4 v 0.1 f + + v cc = 15 v to 32 v i f = 7 ma to 16 ma 20975-1 1 2 3 4 8 7 6 5 v = 15 v to 32 v cc i ol 0.1 f 2.5 v + + 20977-1 1 2 3 4 8 7 6 5 v oh 0.1 f 100 ma v = 15 v to 32 v cc i = 7 ma to 16 ma f + 20974-1 0.1 f 100 ma v = 15 v to 32 v cc 1 2 3 8 7 6 5 4 v ol + 20976-1 i f 0.1 f v = 15 v to 32 v cc v > 5 v o 1 2 3 4 8 7 6 5 + 20978 1 2 3 4 8 7 6 5 v o > 5 v 0.1 f v cc i f = 10 ma + switching characteristics parameter test condition symbol min. typ. max. unit propagation delay time to logic low output (1) r g = 10 ? , c g = 10 nf, f = 10 khz, duty cycle = 50 % t phl 0.1 0.4 s propagation delay time to logic high output (1) r g = 10 ? , c g = 10 nf, f = 10 khz, duty cycle = 50 % t plh 0.1 0.4 s pulse width distortion (2) r g = 10 ? , c g = 10 nf, f = 10 khz, duty cycle = 50 % pwd 0.2 s rise time r g = 10 ? , c g = 10 nf, f = 10 khz, duty cycle = 50 % t r 0.1 s
document number: 81314 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.3, 15-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 2.5 a output current igbt and mosfet driver vishay semiconductors notes (1) this load condition a pproximates the gate load of a 1200 v/75 a igbt. (2) pulse width distortion (pwd) is defined as |t phl -t plh | for any given device. (3) the difference between t phl and t plh between any two vo3120 parts und er the same test condition. fig. 7 - t plh , t phl , t r and t f test circuit and waveforms notes (1) pins 1 and 4 need to be connected to led common. (2) common mode transient imm unity in the high state is the maximum tolerable |dv cm /dt| of the common mode pulse, v cm , to assure that the output will remain in the high state (i.e., v o > 15 v). (3) common mode transient imm unity in a low state is the maximum tolerable |dv cm /dt| of the common mode pulse, v cm , to assure that the output will remain in a low state (i.e., v o < 1 v). fig. 8 - cmr test circuit and waveforms fall time r g = 10 ? , c g = 10 nf, f = 10 khz, duty cycle = 50 % t f 0.1 s uvlo turn on delay v o > 5 v, i f = 10 ma t uvlo-on 0.8 s uvlo turn off delay v o < 5 v, i f = 10 ma t uvlo-off 0.6 s common mode transient immunity parameter test condition symbol min. typ. max. unit common mode transi ent immunity at logic high output (1)(2) t a = 25 c, i f = 10 ma to 16 ma, v cm = 1500 v, v cc = 32 v |cm h |25 35 kv/s common mode transi ent immunity at logic low output (1)(3) t a = 25 c, v cm = 1500 v, v cc = 32 v, v f = 0 v |cm l |25 35 kv/s switching characteristics parameter test condition symbol min. typ. max. unit 20979-1 1 3 2 4 5 7 6 8 0.1 f i = 7 ma to 16 ma f v = 15 v to 32 v cc 10 500 10 khz 50 % duty cycle i f t r t plh t phl out 90 % 50 % 10 % t f v o 10 nf + + 20980-1 1 3 2 4 5 7 6 8 5 v 0 v 0.1 f a v o v o v = 1500 v cm v = 32 v cc v oh v ol v o switch at a: i f = 10 ma switch at b: i f = 0 ma d v d t d t d t v cm + + + i f = r
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 81314 6 rev. 1.3, 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 vishay semiconductors 2.5 a output current igbt and mosfet driver note ? as per iec 60747-5-2, 7.4.3.8.1, this optoco upler is reinforced rated and suitable for safe el ectrical insulation only with in the safety ratings. compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 9 - high output voltage drop vs. temperature fig. 10 - high output current vs. temperature fig. 11 - output low voltage vs. temperature fig. 12 - output low current vs. temperature safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 40/110/21 comparative tracking index cti 175 399 peak transient overvoltage v iotm 8000 v peak insulation voltage v iorm 890 v safety rating - power output p so 500 mw safety rating - input current i si 300 ma safety rating - temperature t si 175 c creepage distance standard dip-8 7 mm clearance distance standard dip-8 7 mm creepage distance 400 mil dip-8 8 mm clearance distance 400 mil dip-8 8 mm - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 - 40 - 20 0 20 40 60 80 100 120 temperature (c) v oh - v cc - high output voltage drop (v) i f = 16 ma i out = - 100 ma v cc = 32 v v ee = 0 v 21745 0 1 2 3 4 - 40 - 20 0 20 40 60 80 100 120 temperature (c) i oh - high output current (a) i f = 16 ma v out = (v cc - 4) v v cc = 15 v v ee = 0 v 21746 0.00 0.05 0.15 0.25 0.10 0.20 0.30 0.35 - 40 - 20 0 20 40 60 80 100 120 temperature (c) v ol - output low voltage (v) v f = 0.8 v i out = 100 ma v cc = 32 v v ee = 0 v 21748 temperature (c) i ol - output low current (a) 21751 0.5 1.5 2.5 3.5 - 40 - 20 0 20 40 60 80 100 i f = 0 ma v out = 2.5 v v cc = 15 v v ee = 0 v
document number: 81314 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.3, 15-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 2.5 a output current igbt and mosfet driver vishay semiconductors fig. 13 - output low voltage vs. output low current fig. 14 - output high voltage drop vs. output high current fig. 15 - supply current vs. temperature fig. 16 - supply current vs. supply voltage fig. 17 - low to high current threshold vs. temperature fig. 18 - transfer characteristics 0 2 3 4 1 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i ol - output low current (a) v ol - output low voltage (v) - 40 c 25 c 110 c i f = 0 ma v cc = 15 v v ee = 0 v 21747 i oh - output high current (a) (v oh - v cc ) output high voltage drop (v) 21749 - 12 - 10 - 8 - 6 - 4 - 2 0 0 0.5 1 1.5 2 2.5 - 40 c 25 c 110 c i f = 16 ma v cc = 15 v v ee = 0 v temperature (c) i cc - supply current (ma) 21754 0 0.5 1.0 1.5 2.0 2.5 - 40 - 20 0 20 40 60 80 100 120 i cch i ccl i f = 16 ma for i cch i f = 0 ma for i ccl v cc = 32 v v ee = 0 v 0.0 1.0 1.5 2.0 0.5 2.5 v cc - supply voltage (v) i cc - supply current (ma) 15 20 25 30 35 i cch i ccl i f = 10 ma for i cch i f = 0 ma for i ccl t a = 25 c v ee = 0 v 21711 0.0 2.0 3.0 4.0 1.0 5.0 1.5 2.5 3.5 0.5 4.5 temperature (c) i flh - low to high current threshold (ma) - 40 0 40 80 120 - 20 20 60 100 v cc = 32 v v ee = 0 v output = open 21750 0 10 15 20 25 30 5 35 012345 i f - forward led current (ma) v o - output voltage (v) t a = 25 c 21752
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 81314 8 rev. 1.3, 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 vishay semiconductors 2.5 a output current igbt and mosfet driver fig. 19 - propagation delay vs. supply voltage fig. 20 - propagation delay vs. temperature fig. 21 - propagation delay vs. forward led current fig. 22 - propagation delay vs. series load resistance fig. 23 - propagation delay vs. series load capacitance 100 200 300 400 500 v cc - supply voltage (v) t p - propagation delay (ns) 15 20 25 30 35 t plh t phl i f = 10 ma, t a = 25 c r g = 10 , c g = 10 nf duty cycle = 50 % f = 10 khz 21714 0 100 200 300 400 500 t a - temperature (c) t p - propagation delay (ns) - 40 - 15 10 60 35 85 110 v cc = 32 v, v ee = 0 v i f = 10 ma r g = 10 , c g = 10 nf duty cycle = 50 % f = 10 khz t plh t phl 21753 0 100 200 300 400 500 i f - forward led current (ma) t p - propagation delay (ns) 6 8 10 14 12 16 v cc = 30 v, v ee = 0 v t a = 25 c r g = 10 , c g = 10 nf duty cycle = 50 % f = 10 khz t phl t plh 21716 0 100 200 300 400 500 r g - series load resistance ( ) t p - propagation delay (ns) 01020 40 30 50 t phl t plh v cc = 30 v, v ee = 0 v i f = 10 ma, t a = 25 c c g = 10 nf duty cycle = 50 % f = 10 khz 21717 0 100 200 300 400 500 c g - series load capacitance (nf) t p - propagation delay (ns) 02040 80 60 100 v cc = 30 v, v ee = 0 v i f = 10 ma, t a = 25 c r g = 10 duty cycle = 50 % f = 10 khz t phl t plh 21718
document number: 81314 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.3, 15-mar-11 9 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vo3120 2.5 a output current igbt and mosfet driver vishay semiconductors package dimensions in millimeters package marking notes ? the vde logo is only marked on option 1 parts. ? tape and reel suffix (t) is not part of the package marking. i178006 pin one id 6.645 0.165 9.77 0.14 0.95 0.19 4 typ. 2.54 typ. 10 3 to 9 7.62 typ. 0.51 0.05 0.25 0.05 3.045 0.255 3.555 0.255 0.70 0.19 6.095 0.255 4 3 2 1 0.79 1.27 5 6 7 8 iso method a 7.62 typ. 0.7 option 7 18450-4 4.6 4.1 8 min. 8.4 min. 10.3 max. 21764-42 vo3120 v yww h 68 x007
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